TI introduces industry's first automotive GaN FET with integrated driver, protection and active power management |
| November 09, 2020 | November 2020 Bond Updates |
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DALLAS, Nov. 9, 2020 /PRNewswire/ -- Texas Instruments (TI) (Nasdaq: TXN) today expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a... |
| View more at: https://www.prnewswire.com:443/news-releases/ti-introduces-industrys-first-automotive-gan-fet-with-integrated-driver-protection-and-active-power-management-301168084.html |
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